Two-Dimensional Electrons in a Strong Magnetic Field with Disorder: Divergence of the Localization Length

Electrons on a square lattice with half a flux quantum per plaquette are considered. An effective description for the current loops is given by a two-dimensional Dirac theory with random mass. It is shown that the conductivity and the localization length can be calculated from a product of Dirac Green's functions with the {\it same} frequency. This implies that the delocalization of electrons in a magnetic field is due to a critical point in a phase with a spontaneously broken discrete symmetry. The estimation of the localization length is performed for a generalized model with $N$ fermion levels using a $1/N$--expansion and the Schwarz inequality. An argument for the existence of two Hall transition points is given in terms of percolation theory.Comment: 10 pages, RevTeX, no figure

On the mechanism of irradiation enhanced exchange bias

By means of layer resolved ion irradiation the mechanisms involved in the irradiation driven modifications of the exchange bias effect in NiFe/FeMn bilayers have been investigated. It is shown that not only the locations of the defects but also the magnetic coupling between both layers during the irradiation process is of crucial importance. This requires an extension of current models accounting for defects in exchange bias systems.Comment: 3 pages, 3 figures, revised version, added results from further structural characterization by TEM, submitted to Europhysics Letter

Integer Quantum Hall Effect for Lattice Fermions

A two-dimensional lattice model for non-interacting fermions in a magnetic field with half a flux quantum per plaquette and $N$ levels per site is considered. This is a model which exhibits the Integer Quantum Hall Effect (IQHE) in the presence of disorder. It presents an alternative to the continuous picture for the IQHE with Landau levels. The large $N$ limit can be solved: two Hall transitions appear and there is an interpolating behavior between the two Hall plateaux. Although this approach to the IQHE is different from the traditional one with Landau levels because of different symmetries (continuous for Landau levels and discrete here), some characteristic features are reproduced. For instance, the slope of the Hall conductivity is infinite at the transition points and the electronic states are delocalized only at the transitions.Comment: 9 pages, Plain-Te

Equivalence of domains for hyperbolic Hubbard-Stratonovich transformations

We settle a long standing issue concerning the traditional derivation of non-compact non-linear sigma models in the theory of disordered electron systems: the hyperbolic Hubbard-Stratonovich (HS) transformation of Pruisken-Schaefer type. Only recently the validity of such transformations was proved in the case of U(p,q) (non-compact unitary) and O(p,q) (non-compact orthogonal) symmetry. In this article we give a proof for general non-compact symmetry groups. Moreover we show that the Pruisken-Schaefer type transformations are related to other variants of the HS transformation by deformation of the domain of integration. In particular we clarify the origin of surprising sign factors which were recently discovered in the case of orthogonal symmetry.Comment: 30 pages, 3 figure

Polytopality and Cartesian products of graphs

We study the question of polytopality of graphs: when is a given graph the graph of a polytope? We first review the known necessary conditions for a graph to be polytopal, and we provide several families of graphs which satisfy all these conditions, but which nonetheless are not graphs of polytopes. Our main contribution concerns the polytopality of Cartesian products of non-polytopal graphs. On the one hand, we show that products of simple polytopes are the only simple polytopes whose graph is a product. On the other hand, we provide a general method to construct (non-simple) polytopal products whose factors are not polytopal.Comment: 21 pages, 10 figure

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Self-assembled GaN quantum dots (QDs) stacked in superlattices (SL) with AlN spacer layers were implanted with Europium ions to fluences of 1013, 1014, and 1015 cm−2. The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation damage causes an expansion of the SL in the [0001] direction which increases with implantation fluence and is only partly reversed after thermal annealing at 1000 °C. Nevertheless, in all cases, the SL quality remains very good after implantation and annealing with Eu ions incorporated preferentially into near-substitutional cation sites. Eu3+ optical activation is achieved after annealing in all samples. In the sample implanted with the lowest fluence, the Eu3+ emission arises mainly from Eu incorporated inside the QDs while for the higher fluences only the emission from Eu inside the AlN-buffer, capping, and spacer layers is observed. © 2010 American Institute of PhysicsFCT-PTDC/CTM/100756/2008program PESSOA EGIDE/GRICESFCT-SFRH/BD/45774/2008FCT-SFRH/BD/44635/200